Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 78A 370000mW 3Pin(3+Tab) TO-262 Tube89865+$15.503750+$14.8411200+$14.4701500+$14.37731000+$14.28462500+$14.17865000+$14.11237500+$14.0461 -
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Category: IGBTtransistorDescription: INFINEON IRG7PH46UD-EP Single transistor, IGBT, N-channel, 108 A, 2 V, 390 W, 1.2 kV, TO-247AD, 3-pin new23921+$47.516610+$44.7902100+$42.7649250+$42.4533500+$42.14171000+$41.79122500+$41.47965000+$41.2849 -
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Category: IGBTtransistorDescription: MOD IGBT 1200V 300A POWIR 6268781+$905.568110+$873.793850+$869.8220100+$865.8502150+$859.4954250+$853.9349500+$848.37431000+$842.0195 -
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Category: IGBTtransistorDescription: Infineon FP50R07N2E4B11BOSA1 NChannel IGBT module, 3-phase bridge, 70 A, Vce=650 V, 31 pin ECONO2 package91531+$549.888610+$535.543750+$524.5459100+$520.7206200+$517.8516500+$514.02631000+$511.63552000+$509.2447 -
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Category: IGBTtransistorDescription: PChannel-12 V 1.3 W 10 nC power Mosfet surface mount - MICRO-3766310+$9.4056100+$8.9353500+$8.62181000+$8.60612000+$8.54345000+$8.46507500+$8.402310000+$8.3710 -
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Category: IGBTtransistorDescription: Infineon IHW40N65R5XKSA1 NChannel IGBT, 40 A, Vce=650 V, 3-pin TO-247 package79735+$16.013850+$15.3294200+$14.9462500+$14.85041000+$14.75462500+$14.64515000+$14.57677500+$14.5082 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 62A 625000mW Automotive 3Pin(3+Tab) TO-247AC Tube39671+$67.882210+$64.9308100+$64.3995250+$63.9864500+$63.33701000+$63.04192500+$62.62875000+$62.2745 -
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Category: IGBTtransistorDescription: IGBT Transistors Automotive 680V 24A IGBT in a TO-247AC package with CoPak DIODE30705+$31.772550+$30.4147200+$29.6544500+$29.46431000+$29.27422500+$29.05695000+$28.92117500+$28.7854 -
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Category: IGBTtransistorDescription: IGBT Transistor Automotive 600V Ultra IGBT D2PAK20821+$39.602410+$37.3302100+$35.6422250+$35.3825500+$35.12281000+$34.83072500+$34.57105000+$34.4087 -
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Category: IGBTtransistorDescription: IGBT Transistor DISCRITES83745+$13.219850+$12.6549200+$12.3385500+$12.25941000+$12.18032500+$12.08995000+$12.03347500+$11.9769 -
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Category: IGBTtransistorDescription: INFINEON IKW25T120 Single transistor, IGBT, universal, 50 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3-pin86765+$30.150950+$28.8624200+$28.1408500+$27.96051000+$27.78012500+$27.57395000+$27.44517500+$27.3162 -
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Category: IGBTtransistorDescription: Diode Switching 1.7kV 600A 2Pin 62MM68811+$1222.830410+$1211.713825+$1206.155450+$1200.5971100+$1195.0388150+$1189.4805250+$1183.9222500+$1178.3638 -
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Category: IGBTtransistorDescription: IGBT Over 21A, Infineon's optimized IGBT design is used for mid frequency applications, with fast response and maximum efficiency for users. By utilizing optimized FRED diodes, optimal performance can be achieved with IGBT # # IGBT transistors. International Rectifiers offer a comprehensive portfolio of IGBT (Insulated Gate Bipolar Transistor) products ranging from 300V to 1200V, utilizing various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and enhancing power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.69141+$57.432710+$54.1374100+$51.6894250+$51.3128500+$50.93621000+$50.51252500+$50.13595000+$49.9006 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 85A 313000mW 3Pin(3+Tab) TO-247AD Tube761310+$7.5672100+$7.1888500+$6.93661000+$6.92402000+$6.87355000+$6.81057500+$6.760010000+$6.7348 -
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Category: IGBTtransistorDescription: IGBT Over 21A, Infineon's optimized IGBT design is used for mid frequency applications, with fast response and maximum efficiency for users. By utilizing optimized FRED diodes, optimal performance can be achieved with IGBT # # IGBT transistors. International Rectifiers offer a comprehensive portfolio of IGBT (Insulated Gate Bipolar Transistor) products ranging from 300V to 1200V, utilizing various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and enhancing power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.15705+$1.861725+$1.723850+$1.6272100+$1.5859500+$1.55832500+$1.52385000+$1.510010000+$1.4893 -
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Category: IGBTtransistorDescription: Co-Pack IGBT Beyond 21A, Infineon's isolated gate bipolar transistors (IGBTs) provide users with a complete range of options to ensure coverage of your applications. The high-efficiency rating makes this series of IGBTs suitable for various applications, and due to its low switching losses, it can support various switching frequencies. IGBT with combination package fast soft recovery parallel diode for bridge configuration52925+$32.808050+$31.4059200+$30.6208500+$30.42451000+$30.22822500+$30.00395000+$29.86377500+$29.7235 -
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Category: IGBTtransistorDescription: IGBT Over 21A, Infineon's optimized IGBT design is used for mid frequency applications, with fast response and maximum efficiency for users. By utilizing optimized FRED diodes, optimal performance can be achieved with IGBT # # IGBT transistors. International Rectifiers offer a comprehensive portfolio of IGBT (Insulated Gate Bipolar Transistor) products ranging from 300V to 1200V, utilizing various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and enhancing power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.50061+$39.885510+$37.5970100+$35.8969250+$35.6354500+$35.37381000+$35.07962500+$34.81805000+$34.6546 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 19A 60000mW 3Pin(2+Tab) D2PAK Tube8717 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(2+Tab) D2PAK T/R693210+$11.5392100+$10.9622500+$10.57761000+$10.55842000+$10.48145000+$10.38537500+$10.308410000+$10.2699 -
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Category: IGBTtransistorDescription: INFINEON IRG4IBC30SPBF Single transistor, IGBT, 23.5 A, 1.6 V, 45 W, 600 V, TO-220FP, 3 pins20435+$13.032650+$12.4757200+$12.1638500+$12.08581000+$12.00782500+$11.91875000+$11.86307500+$11.8073 -
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Category: IGBTtransistorDescription: IGBT Transistor 600V DC-1 KHZ (STD) DISCRITE IGBT86391+$90.165810+$86.2455100+$85.5399250+$84.9910500+$84.12861000+$83.73652500+$83.18775000+$82.7173 -
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Category: IGBTtransistorDescription: Co-Pack IGBT Up to 20A, Infineon's isolated gate bipolar transistor (IGBT) provides users with a complete range of options to ensure coverage of your application. The high-efficiency rating makes this series of IGBTs suitable for various applications, and due to its low switching losses, it can support various switching frequencies. IGBT with combination package fast soft recovery parallel diode, used for bridge configuration # # IGBT transistors. International Rectifier provides a comprehensive IGBT (Insulated Gate Bipolar Transistor) product portfolio, ranging from 300V to 1200V, using various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and improving power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.122210+$6.8976100+$6.5527500+$6.32281000+$6.31132000+$6.26535000+$6.20787500+$6.161910000+$6.1389 -
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Category: IGBTtransistorDescription: IGBT Module 600V 13A28715+$23.120450+$22.1323200+$21.5790500+$21.44071000+$21.30242500+$21.14435000+$21.04557500+$20.9467 -
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Category: IGBTtransistorDescription: PChannel-12 V 1.3 W 10 nC power Mosfet surface mount - MICRO-390055+$14.926950+$14.2890200+$13.9317500+$13.84241000+$13.75312500+$13.65115000+$13.58737500+$13.5235 -
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Category: IGBTtransistorDescription: Single transistor, IGBT, 60 A, 1.55 V, 349 W, 1.2 kV, TO-247, 3 pins66525+$16.642150+$15.9309200+$15.5326500+$15.43301000+$15.33352500+$15.21975000+$15.14867500+$15.0774 -
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Category: IGBTtransistorDescription: INFINEON IKW15N120H3FKSA1 Single transistor, IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 pins59215+$20.930150+$20.0357200+$19.5348500+$19.40961000+$19.28432500+$19.14125000+$19.05187500+$18.9623 -
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Category: IGBTtransistorDescription: IGBT 600V Trenchsstop RC Hard SW App, IGBT791310+$9.6228100+$9.1417500+$8.82091000+$8.80492000+$8.74075000+$8.66057500+$8.596410000+$8.5643 -
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Category: IGBTtransistorDescription: Single transistor, IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-220, 3 pins56965+$14.781850+$14.1501200+$13.7963500+$13.70791000+$13.61952500+$13.51845000+$13.45527500+$13.3920
